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IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

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IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

Name: IRF9640 General Purpose Rectifier Diode P Channel 200V 11A Tc 125W
Brand: VISHAY
Price: 1 USD

Wholesale IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from china suppliers

Brand Name : VISHAY

Model Number : IRF9640

Place of Origin : CHINA

MOQ : 10 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 50000PCS

Delivery Time : STOCK

Packaging Details : TUBE

Categories : Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) : 200V

Current - Continuous Drain (Id) @ 25°C : 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 500 mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V

Power Dissipation (Max) : 125W (Tc)

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IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Product Attributes	Select All
Categories	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB

IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

Deli electronics tehcnology co ltd
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Email:sales3@deli-ic.com
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TEL:86-0755-82539981

Product Tags:

high current schottky diode

surface mount schottky diode

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